Characterization of Flexible Copper Selenide Films on Polyamide Substrate Obtained by SILAR Method—Towards Application in Electronic Devices

Thin copper selenide films were synthesized on polyamide sheets using the successive ionic layer adsorption and reaction (SILAR) method at three different temperatures. It was found that elevating temperature of solution led to creation with features. X-ray diffraction characterization revealed all crystallized into a cubic Cu2−xSe, but crystallinity parameters. With temperature, grain size increased (6.61–14.33 15.81 for 40, 60 80 °C, respectively), while dislocation density strain decreased. Surface topology investigated Scanning Electron Microscopy Atomic Force Microscopy, which grains combined agglomerates up 100 nm (80 °C) 1 μm (40 °C). The value direct band gap thin films, obtained UV/VIS spectroscopy, varied in range 2.28–1.98 eV. formation Cu2−xSe confirmed by Raman analysis; most prominent peak is located 260 cm−1, attributed binary selenides. deposited showed p-type conductivity, electrical resistivity 20–50 Ω. Our results suggest elevated temperatures prevent large agglomeration, leading higher resistance behavior.